氮分压对氮化铜薄膜结构及光学带隙的影响  

Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films

作　　者：肖剑荣[1,2] 徐慧[1] 李燕峰[1] 李明君[1] 

机构地区：[1]中南大学物理科学与技术学院 [2]桂林工学院数理系,桂林541004

出　　处：《物理学报》2007年第7期4169-4174,共6页Acta Physica Sinica

摘　　要：在不同的氮分压r(r=N2/[N2+Ar])和射频功率P下,使用反应射频磁控溅射法,在玻璃基片上制备了氮化铜薄膜样品.用台阶仪测得了薄膜的厚度,用原子力显微镜、X射线衍射仪、紫外-可见光谱仪对薄膜的表面形貌、结构及光学性质进行了表征分析.结果表明,薄膜的沉积速率随P和r的增加而增大.薄膜表面致密均匀,晶粒尺寸为30nm左右.随着r的增加,薄膜颗粒增大,且薄膜由(111)晶面转向(100)晶面择优生长.薄膜的光学带隙Eg在1.47—1.82eV之间,随r的增加而增大.Copper nitride （ Cu3 N） thin films were deposited on glass substrates by reactive radio frequency magnetron sputtering under different radio frequency power （P） and nitrogen partial pressure r （ r = N2/[ N2 ＋ Ar] ）. The thickness, crystalline structure and surface morphology of films were characterized by profilometer, X-ray diffraction （XRD） and atomic force microscopy （AFM）, respectively. The optical transmission spectrum was obtained by an ultraviolet-visible （UV-VIS） spectrophotometer and the optical band gap （Eg） was calculated, The results suggest that the films＇ deposition rate increases with P and r. The surface of the films reveals a compact structure, and the grain size of Cu3 N is about 30 nm. Meanwhile, with increasing r, the grain size and optical band gap of Cu3N increase, of which Es ranges from 1.47 to 1.82eV, and the films＇ growth prefers the （111） direction at low r and the （100） direction at high r.

关 键 词：氮化铜薄膜 反应射频磁控溅射 晶体结构 光学带隙 

分 类 号：O484.41[理学—固体物理]