Electron impact excitation of tetrasulfur S4 molecule  

作　　者：闫冰 潘守甫 于俊华 

机构地区：[1]Institute of Atomic and Molecular Physics, Jilin University, Ghangchun 130012, China [2]State Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

出　　处：《Chinese Physics B》2007年第7期1956-1958,共3页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China（Grant Nos 10604022 and 60278009） and the Foundation of State Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, China.

摘　　要：Electron impact excitation of tetrasulfur S4 molecule is investigated in this work using R-matrix method. The twelve low-lying electronic states are used in close-coupling expansion to represent the target states, and the integral cross sections for elastic scattering and excitation into the six lowest electronic states are calculated.Electron impact excitation of tetrasulfur S4 molecule is investigated in this work using R-matrix method. The twelve low-lying electronic states are used in close-coupling expansion to represent the target states, and the integral cross sections for elastic scattering and excitation into the six lowest electronic states are calculated.

关 键 词：cross section S4 molecule SCATTERING 

分 类 号：O422.5[理学—声学] O436.2[理学—物理]