MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES  

作　　者：Min Yang 

机构地区：[1]School of Mathematics and Information Science, Yantai University, Yantai 264005, China

出　　处：《Journal of Computational Mathematics》2007年第4期485-496,共12页计算数学（英文）

基　　金：The research is partially supported by the National Natural Science Foundation of China(No. 10271066)

摘　　要：In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.

关 键 词：Semiconductor device Unstructured meshes Finite volume Multistep method Error estimates. 

分 类 号：TN3[电子电信—物理电子学]