极性晶体中界面强耦合激子的性质  

The Properties of the Strong-coupling Interface Exciton in Polar Crystals

作　　者：杨洪涛[1] 额尔敦朝鲁[2] 

机构地区：[1]内蒙古民族大学物理与机电学院,内蒙古通辽028043 [2]河北科技师范学院数理系

出　　处：《河北科技师范学院学报》2007年第1期13-18,28,共7页Journal of Hebei Normal University of Science & Technology

基　　金：内蒙古自然科学基金(项目编号:200208020110)资助课题;河北科技师范学院博士基金(项目编号:2006D001)资助课题

摘　　要：采用线性组合算符和变分法研究了极性晶体中激子与IO声子强耦合、与LO声子弱耦合体系的基态能量,推导出了激子的自陷能和诱生势的表达式,并以AgCl/AgBr晶体为例进行了数值计算。结果表明,轻空穴激子的自陷能不仅与激子的坐标z有关,而且电子—空穴间距离ρ对激子自陷能的影响也十分显著;轻空穴激子和重空穴激子的诱生势不仅与电子—空穴间距离ρ有关,而且激子距离晶体界面的位置z对诱生势的影响也十分显著。The ground state energy of the system,which is the exciton interaction bulk longitudinal-optical（LO） phonons and strong-coupling interface-optical（IO） investigated by using the linear-combination operator and the variational method. the induced potential of the exciton are derived. Numerical calculations for the both with the weak-coupling phonons in a polar crystal, is The self-trapping energy and AgCI/AgBr crystal interface show that the self-trapping energy of the light hole exciton depends not only on the coordinate z , but also on the distance ρ between electron and hole; the induced potentials of the light hole exciton and the heavy hole exciton relates not only to the distance ρ between electron and hole, but also to the position coordinate z of the exciton.

关 键 词：轻空穴激子 重空穴激子 自陷能 诱生势 

分 类 号：O734[理学—晶体学] O737