Cu纳米线的高温原位加热XRD研究  

Study on Cu nanowires by using in-situ high-temperature XRD

作　　者：蔡泉[1] 张俊喜[2] 陈兴[1] 陈中军[1] 王维[1] 默广[1] 张坤浩[1] 胡天斗[1] 吴忠华[1] 张立德[2] 

机构地区：[1]中国科学院高能物理研究所 [2]中国科学院固体物理研究所,合肥230031

出　　处：《核技术》2007年第7期565-567,共3页Nuclear Techniques

基　　金：国家自然科学基金(10374087)资助

摘　　要：采用电化学沉积方法,在孔径约50nm的阳极氧化铝模板中生长Cu纳米线,经过高温原位加热XRD实验,证实了其热膨胀系数约2.6×10-5K-1,稍大于块体Cu,与文献中Cu纳米线近似为零的热膨胀系数有明显的区别。对这一现象进行了简要的讨论后得出结论认为:基于模板生长的Cu纳米线,其晶格完整程度是决定热膨胀的重要因素。Cu nanowires with diameter of about 50 nm were electrochemically deposited in anodic alumina membrane. An in-situ high-temperature XR.D technique was used to measure the crystalline structures. The results demonstrate that these Cu nanowires have a thermal expansion coefficient of about 2.6×10^5 K^-1, which is a little larger than the bulk＇s one. These polycrystalline Cu nanowires are completely different from the zero-expansion Cu nanowires reported in previous reference. It is concluded that the thermal expansion coefficient is dependent on the crystalline perfection in nanowires.

关 键 词：Cu纳米线 高温原位加热 XRD 热膨胀 

分 类 号：O722[理学—晶体学]