半导体纳米颗粒镶嵌薄膜光学性能的研究及进展  

Present Status and Prospects for Research on Optical Properties of Semi-conductor Nanocrystalline Particles Embedded in Medium Films

作　　者：杨扬[1] 柴跃生[1] 张敏刚[1] 孙钢[1] 

机构地区：[1]太原科技大学材料科学与工程学院,山西太原030024

出　　处：《山西冶金》2007年第3期6-9,共4页Shanxi Metallurgy

基　　金：山西省自然科学基金(20041073)

摘　　要：由于三维量子限域效应的作用,半导体纳米颗粒镶嵌薄膜材料呈现出与块体材料完全不同的光学性能,如非线性光学效应、光致发光等。这些优良特性使半导体纳米颗粒镶嵌薄膜材料在光电器件、太阳能电池、传感器、新型建材等领域有广泛的应用前景,并日益成为关注焦点。从这种材料的内涵及大概分类出发,阐述了其相关的光学理论,如三维量子限域效应、光致发光的机制等,介绍了III-V族(GaAs,GaSb,InP等)和IV族(Si,Ge)半导体纳米颗粒镶嵌薄膜的光学性能方面的研究进展。Because of the effect of the three dimensional quantum confinement, semi.conductor nano- granular materials embedded in medium matrix presents optical properties which are completely different from the corresponding bulk materials, such as non-linear optical properties, visible region photoluminescence, etc. These special properties can be widely applied to photoelectric apparatus, solar energy battery, sensor, new building materials and so on, making this kind of material more and more popular with the researchers. Semi-conductor nano-granular materials embedded in medium matrix have broad application prospect. This article begins with the definition of nanometer film materials, introduces the corresponding optical theory,such as the three dimensional quantum confinement, elaborates the research development of the optical properties on the films embedded with nanometer IIIV （ GaAs, GaSh, InP, InAs, InSb etc ）, IV （ Si, Ge ） semi.conductor particles.

关 键 词：纳米半导体颗粒镶嵌薄膜 量子限域 介电限域 光致发光 非线性光学效应 

分 类 号：TN304.2[电子电信—物理电子学]