一种含SiO_2氧化物玻璃的晶化温度-压力依赖关系  

PRESSURE DEPENDENCE OF CRYSTALLIZATION TEMPERATURE OF A SILICA CONTAINED OXIDE IONIC GLASS

作　　者：沈中毅[1] 陈立泉[1] 张云[1] 殷岫君[1] 刘勇[1] 王超英[1] Cros.C. 

机构地区：[1]中国科学院物理研究所 [2]Laboratoire de Chimie du Solide du C.N.R.S.,Universite de Bordeaux I,France

出　　处：《高压物理学报》1990年第4期254-258,共5页Chinese Journal of High Pressure Physics

摘　　要：本文应用DTA及X射线衍射法在常压及高压下对—种含SiO_2的锂离子导体玻璃0.3Li_2O-0.67SiO_2-0.03V_2O_5加热时的晶化行为进行了研究。该氧化物玻璃的晶化过程分两个阶段。在常压下,第一晶化过程发生在560℃ 附近,析出相为Li_2O·2SiO_2。对应的晶化温度T_(x1)随压力的升高发生了急剧的变化。从常压到0.3GPa,T_(x1)从560℃升高到620℃;继续升压时T_(x1)突然下降,并在0.4GPa处跌到528℃,呈现一个陡削的峰值。0.4GPa以上,T_(x1)随压力的变化则呈常规行为,比较平稳地、大致线性地升高,一直到最高测定压力2GPa。本文最后对这些行为的可能原因进行了讨论。The crystallization behavior of amorphous lithium ionic conductor 0.3 Li2O-0.67SiO2-0.03V2O5 has been studied under ambient and high pressures. There were two steps for the crystallization of the amorphous material. Li2Si2O5 was formed in the first step at 560C under ambient pressure while the precipitation of SiO2 occurred in the second one. The temperature of the first crystallization step Txt was greatly influenced by pressure. With the increasing pressure, it increased from 560℃ at ambient pressure to 620℃. the maximum, at 0.3GPa and then dropped sharply to 528℃ at 0. 4iPa. After that T(?) increased gradually with a rate of 29℃ CiPa up to 2CiPa,the highest pressure applied. An explanation will also be given.

关 键 词：SIO2 玻璃 晶化 温度 压力 

分 类 号：O794[理学—晶体学]