辐射对GaAs霍尔器件电磁参数的影响  

Effects of Irradiation on the Electromagnetic Parameters of GaAs Hall Transducer

作　　者：王军[1] 杨渭[1] 

机构地区：[1]中国石油大学物理科学与技术学院,山东东营257061

出　　处：《半导体技术》2007年第7期570-573,共4页Semiconductor Technology

基　　金：教育部高等学校骨干教师项目(K001804A)

摘　　要：为了深入揭示γ和β射线辐照对GaAs霍尔器件的影响规律,在无源、无磁场作用时的辐照研究基础上,又用低剂量率γ和β射线对恒流激励、无磁场和有确定磁场作用的器件进行非永久辐照,考察了输入端电阻及霍尔输出电压的变化。结果表明,无磁场作用时,γ和β射线辐照均导致器件输入端电阻增加,而且与辐照时间近似成正比;有确定磁场作用时,输入端电阻与霍尔输出电压也因辐照发生变化,但与辐照时间没有确定关系,而且变化量较小。所有变化均不因辐照停止而消失,反应了常温退火过程对辐射损伤的不可恢复性。上述结果不仅从一定程度上证实了辐射损伤理论,而且对相应的辐射防护研究具有重要的参考价值。The effects of temporary irradiation with low dose rate γ and β rays on the input terminal resistance and Hall output voltage of GaAs transducers driven by constant current and in or not in magnetic field were studied. The resuhs＇ indicate that the input terminal resistance linearly increased with irradiating time when the devices were not in any magnetic field. The input terminal resistance and Hall output voltage could change a little when the devices were in a certain magnetic field, but the unambiguous relation between extent of changes and irradiating time could be found. The facts prove the theory of radiation damage at some extent and can help the relevant studies of radiation defense.

关 键 词：γ和β射线 GaAs霍尔器件 输入端电阻 霍尔输出电压 

分 类 号：TN382[电子电信—物理电子学]