p-Si TFT栅绝缘层用SiN薄膜的研究  

Study of Silicon Nitride Films as Gate Insulator Layer for p-Si Thin Film Transistor

作　　者：张化福[1] 祁康成[2] 袁玉珍[1] 刘汉法[1] 类成新[1] 魏功祥[1] 

机构地区：[1]山东理工大学物理与光电信息技术学院,山东淄博255049 [2]电子科技大学光电信息学院,成都610054

出　　处：《半导体技术》2007年第7期602-605,609,共5页Semiconductor Technology

基　　金：电子科技大学青年基金(YF020503)

摘　　要：以NH3和SiH4为反应源气体,采用射频等离子体增强化学气相沉积(RF-PECVD)法在多晶硅(p-Si)衬底上沉积了一系列SiN薄膜,并利用椭圆偏振测厚仪、超高电阻-微电流计、C-V测试仪对所沉积的薄膜作了相关性能测试。系统分析了沉积温度和射频功率对SiN薄膜的相对介电常数、电学性能及界面特性的影响。分析表明,沉积温度和射频功率主要是通过影响SiN薄膜中的Si/N比影响薄膜的性能,在制备高质量的p-Si TFT栅绝缘层用SiN薄膜方面具有重要的参考价值。Radio frequency plasma-enhanced chemical-vapor deposited silicon nitride films on p-Si wafers were prepared by the reaction of NH3, SiH4 and measured by spectral ellipsometry, ultrahigh resistance-micro amperemeter, C-V measurements. The influences of deposition temperature and RF power on dielectric constant, electronic properties and surface properties were systematically discussed. It is found that deposition temperature and RF power influence the properties of silicon nitride thin films by affecting the Si/N ratios, which is beneficial to preparing high property silicon nitride film as gate insulator layer for p-Si thin film transistor.

关 键 词：等离子体增强化学气相沉积 栅绝缘层 SiN薄膜 

分 类 号：O484.1[理学—固体物理] O481.5[理学—物理]