不同钝化介质层对AlGaN/GaN异质结二维电子气密度的影响  

The Impact of Different Passivation Layers on Electron Density of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures

作　　者：陈国强[1] 徐峰[2] 

机构地区：[1]南京工程学院基础部,江苏南京211167 [2]南京大学物理学系,江苏南京210093

出　　处：《南京工程学院学报（自然科学版）》2007年第2期40-44,共5页Journal of Nanjing Institute of Technology(Natural Science Edition)

摘　　要：试验用高分辨率X射线衍射仪(HRXRD)测定了不同介质层钝化后异质结势垒层AlGaN的附加应变,用范德堡霍尔效应测量法测定了不同介质层钝化后异质结二维电子气密度,发现AlN钝化层尽管给势垒层带来附加的压应变,但依然使二维电子气密度增大,借此讨论了钝化对势垒层表面态产生的影响,分析了钝化机制.By using high resolution X-ray diffraction （HRXRD）, an experiment is conducted to measure the additional responses of Al0.27 Ga0. 73 N/GaN＇s heterostructures when different dielectric layers are passivated. Hall effect measurement is used to measure electron density of the two-dimensional electron gas （2DEG）. It is found that AIN passivation layers can still increase the density of two-dimensional electron gas despite the additional responses. Thus, the paper discusses the impact that passivation plays on the surface state of AlGaN. The passivation system is also discussed.

关 键 词：钝化 应变 表面态 二维电子气密度 

分 类 号：TN304.26[电子电信—物理电子学]