一种基于横向PNP管的低失调CMOS带隙基准源  

A Low-Offset CMOS Bandgap Reference with Lateral PNP

作　　者：蔡伟[1] 陆铁军[1] 王宗民[1] 

机构地区：[1]北京微电子技术研究所,北京10076

出　　处：《微电子学与计算机》2007年第7期156-159,共4页Microelectronics & Computer

摘　　要：基于横向寄生PNP管，提出了一种新颖结构的低失调CMOS带腺基准源。该带隙能够降低运放失调电压和镜像电流对基准电压的影响．提高带腺抗工艺失调的能力。仿真结果表明，基准电压为1．2280V，在—40℃～125℃．典型偏差小于2．7mV，温度系数为13．9ppm／℃。该带腺具有较好的工艺稳定性，在各工艺角情况下，失调电压小于±25．3mV．比传统带腺相对精度提高了3．3倍。最后，基于0．35μm CMOS工艺实现了该电压基准源。Based on the parasitical lateral PNP, a novel CMOS bandgap voltage reference with low offset is presented. The errors caused by the input-offset voltage of the OP-AMP and the mismatch of current mirror can be minimized in the proposed architecture. Simulation shows that, the output voltage is 1.228 0V at 27℃, the total variation of output voltage is less than 2.7mY and the temperature coefficient is 13.9ppm/℃ over -40℃-125℃. Specially, the proposed bandgap has improved stability to process condition. In all process comer, the reference voltage changes less than ＋ 25.3mV. The relative accuracy is increased by 3.3 times compared with traditional bandgap reference . At last, a complete bandgap reference is designed based on 0.35μm CMOS process.

关 键 词：带隙基准 横向PNP管 失调电压 电流失配 

分 类 号：TN4[电子电信—微电子学与固体电子学]