Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD  

PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响(英文)

作　　者：陈永生[1,2] 汪建华[3] 卢景霄[1] 杨根[1] 郜小勇[1] 杨仕娥[1] 

机构地区：[1]郑州大学物理工程学院材料物理重点实验室 [2]中国科学院等离子体物理研究所,合肥230031 [3]中国科学院等离子体物理研究所

出　　处：《Journal of Semiconductors》2007年第7期1005-1008,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2006CB202601)~~

摘　　要：The hydrogen plasma degradation of transparent conduction oxides （TCO） is studied for hydrogenated microcrystalline Si（μc-Si：H）prepared by plasma enhanced chemical vapor deposition （PECVD）. TCO films such as SnO2 and SnO2/ZnO bi-layer films were exposed to atomic H at various substrate temperatures and for various treatment times. A decrease in the transmittance due to reduction by atomic H was scarcely observed for SnO2 / ZnO bi-layer,while a decrease for SnO2 was found to depend strongly on the substrate temperature. The resistivity of SnO2 films decreases significantly when substrate temperature exceeds 150℃in H-plasma. However, H-plasma treatment has little impact on the resistivity of SnO2/ZnO bi-layer film. The reason for the decrease in the transmittance is the appearance of metallic Sn on the surface, and under this condition no μc-Si： H film is deposited. SnO2/ZnO bi-layer is very effective for the suppression of the reduction of TCO during μc-Si：H deposition. The performance of microcrystalline silicon solar cells fabricated on ZnO/SnO2/glass is also investigated.研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.

关 键 词：TCO hydrogenated microcrystalline silicon hydrogen plasma degradation 

分 类 号：TN304.05[电子电信—物理电子学]