垂直腔面发射激光器的温度模型  

An Improved Thermal Model for a VCSEL

作　　者：梁锋[1] 高建军[1] 田学农[1] 

机构地区：[1]东南大学信息科学与工程学院,南京210096

出　　处：《Journal of Semiconductors》2007年第7期1125-1129,共5页半导体学报（英文版）

基　　金：国家自然科学重点基金(批准号:NSFC60536010);新世纪人才支持计划(批准号:NCET-05-0464)资助项目~~

摘　　要：针对垂直腔面发射激光器提出了一种改进的温度模型.该模型建立在半导体激光器Tucker模型的基础之上,通过令器件的寄生电阻和反向饱和电流受温度控制,来模拟激光器的输入特性(V-I特性),通过引入温度控制的泄漏电流来模拟激光器的输出特性(L-I特性).模型的参数提取可以基于Tucker模型,并能方便地应用到HSPICE电路仿真软件中,通过对比可以发现,仿真结果和测试结果吻合得很好.An improved thermal model for a vertical cavity surface-emitting laser is proposed. The model is based on Tucker＇ s model of the laser diode. The voltage-current （V-I） characteristic of the laser is given by introducing the thermal effect to the parasitic resistance and to the reverse saturation current. The light output power-current （L-I） characteristic is given by adding a thermal related leakage current to the model. The model proposed in this paper is more practical than thermal models proposed in the reference, and model parameters can be easily extracted with methods that have been presented by other authors. The model is implemented into SPICE-like simulators including HSPICE,and the simulated and measured V-I characteristics and L-I characteristics exhibit a good agreement over a wide range of ambient temperature.

关 键 词：VCSEL 等效电路模型 温度效应 

分 类 号：TN248[电子电信—物理电子学]