纳米银在低温下电阻率的研究(英文)  

ELECTRICAL RESISTIVITY OF NANOSTRUCTURED SILVER AT LOW TEMPERATURE

作　　者：刘新建[1] 范小波[1] 白海洋[1] 童晓树 冉启泽[1] 金铎[1] 秦晓英[2] 

机构地区：[1]中国科学院低温技术实验中心极低温开放实验室,北京100080 [2]中国科学院固体物理所,合肥230031

出　　处：《低温物理学报》1997年第1期21-27,共7页Low Temperature Physical Letters

基　　金：The financial support by the National Natural Science Foundation of China(NSFC)

摘　　要：本文详细报道了对系列纳米银样品在低温下电阻率的测量结果，并把结果与在同一实验装置下测量多晶银的测量结果进行了比较。Measurements of the electrical resistivity of nano-silver specimens particles 27nm have been performed in temperature range 4.2K～300K by means of a four-probe dc technique. Specimens were shaped with pressure 0. 2GPa～1. 8GPa. The result show that nano-grains cause phonon softening effect and that boundaries' contribution to resistivity is the same as that of coarse polycrytalline's. We try to explain the effect by boundary-barrier model which was referred by Gleiter.

关 键 词：纳米银 银 低温 电阻率 

分 类 号：O614.122[理学—无机化学] O513[理学—化学]