一种低压CMOS亚阈型PTAT基准源  

Low Voltage Sub-threshold CMOS PTAT Voltage Reference Source

作　　者：郎君[1] 何书专[2] 杨盛光[1] 李丽[1] 高明伦[1] 

机构地区：[1]南京大学物理系微电子设计研究所,江苏南京210093 [2]江苏省光电信息功能材料重点实验室,江苏南京210093

出　　处：《微电子学》2007年第3期374-377,共4页Microelectronics

基　　金：国家自然科学基金资助项目(90307011);江苏省高技术研究资助项目(BG2005030)

摘　　要：设计了一款工作在低电源电压且与绝对温度成正比（PTAT）的基准电路;采用衬底偏置技术、电阻分压作为PMOS放大器的输入和用工作在亚阈值区的NMOS管代替衬底PNP管三种方法,使得该电路可以在低电源电压下工作,且工作电流较小。该电路采用CSMC 0.6μm2P2 M工艺,电源电压为1.2 V、温度为0-100℃时,输出电压的温度系数为0.912 mV/K,电源电流为6.8μA;当电源电压在1.1-2.0 V变化时,室温下的输出电压是461.4±0.4 mV。A PTAT voltage reference with low power supply is designed. The bulk biasing technique, dividing voltage by resistors as the input of the amplifier and substituting NMOS operating in sub-threshold region for bulk PNP transistors are used to reduce, the power. The PTAT voltage reference is implemented in a standard 0. 6 μm CMOS 2P2M process. When operating at a 1.2 V power supply within the temperature range from 0 ℃ to 100 ℃, the device has a temperature coefficient of 0. 912 mV/K and a supply current of about 6.8 μA, and it outputs a reference voltage of 461.4 ± 0. 4 mV at room temperature, when the power supply varies in 1.1 - 2.0 V range.

关 键 词：衬底偏置 基准电压源 与绝对温度成正比 低电源电压 

分 类 号：TN432[电子电信—微电子学与固体电子学]