一种新型2.4GHz RF低噪声放大器的设计  

Design of Novel 2.4 GHz RF Low Noise Amplifier

作　　者：高清运[1] 李学初[1] 

机构地区：[1]南开大学信息技术科学学院微电子系,天津300071

出　　处：《微电子学》2007年第3期417-420,共4页Microelectronics

基　　金：天津市科技攻关项目资助(033187111)

摘　　要：提出了一种新型的低噪声放大器,在输入管的栅极加入一个电容,使放大器的噪声性能与增益都得到明显的改善。该电路基于Chartered 0.18μm CMOS工艺设计,工作频率为2.4GHz。仿真表明,在电流消耗为300μA的条件下,提出的低噪声放大器具有更好的噪声系数与增益,分别比传统的电感源极衰减低噪声放大器改善1.9 dB与5.3 dB。An improved low noise amplifier （LNA） is proposed in this paper. With the addition of a capacitor at the gate node of the input transistor, better noise figure and gain is achieved for the proposed LNA, especially when its power consumption is low. The circuit is designed based on Chartered 0. 18μm CMOS technology. Simulation results show that, for 300μA current dissipation, the noise figure and gain of the LNA have been improved by 1.9 dB and 5.3 dB, respectively, compared with those of the conventional LNA with inductive source degeneration.

关 键 词：低噪声放大器 噪声系数 失配因子 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]