一种高温段指数曲率补偿电压基准源  

Exponential Curvature Compensated Voltage Reference for High Temperature

作　　者：马超[1] 刘永根[1] 薛卫东[1] 张波 

机构地区：[1]电子科技大学IC设计中心,四川成都610054

出　　处：《微电子学》2007年第3期436-439,共4页Microelectronics

摘　　要：设计了一种全双极电压基准源结构,利用BJT反向饱和电流的温度特性,对一阶补偿的基准电压进行指数曲率补偿,改善了基准输出电压的温度特性。Hspice仿真结果表明,在-25~130℃范围内,补偿后的基准电压温度系数从14.3 ppm/℃减小到8.4 ppm/℃。仿真结果与理论分析相吻合。从工艺及电路设计的角度,对仿真结果进行了较为深入的分析研究。An exponential curvature compensation technique based on bipolar process for voltage reference is described. Sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to make exponential curvature compensation on the first-order compensated reference voltage, for an improved temperature coefficient. Hspice simulation shows that the temperature coefficient of the bandgap reference voltage is reduced to 8. 4 ppm/℃ from 14. 3 ppm/℃ in the temperature range from --25 ℃ to 130 ℃.

关 键 词：双极集成电路 电压基准源 指数曲率补偿 

分 类 号：TN433[电子电信—微电子学与固体电子学]