电子束和赤霉素复合处理一串红干种子对M_1代生长发育的影响  

Effect of Combined Treatments of Electron Beam Radiation and GA on Growth and Development of M_1 of Scarlet Sage Dry Seeds

作　　者：黄海涛[1] 王丹[1] 周丽娟[1] 李卫锋[1] 宋恒[1] 

机构地区：[1]西南科技大学生命科学与工程学院,四川绵阳621000

出　　处：《西北农业学报》2007年第4期253-256,共4页Acta Agriculturae Boreali-occidentalis Sinica

基　　金：中国工程物理研究院横向合作研究课题(项目编号200305)

摘　　要：一串红干种子经电子束辐照处理后,以赤霉素进行复合处理。对处理后的一串红种子的发芽率、成活率、盛花期的株高、花轴长、单轴花朵数、花粉生活力、叶绿素含量以及叶解剖结构等参数进行统计分析,结果表明,一串红的电子束处理半致死剂量在55 Gy左右,85 Gy为电子束处理一串红的致死剂量,电子束与赤霉素复合处理明显减轻了植株的损伤,25 mg/L的赤霉素为最适宜处理浓度。Scarlet sage seeds were irradiated by electron beam and treated with GA. Then analyzed the germination percentage, survival rate, height of plant, long of rachis, sum of flowers of a rachis, pollen′s vigor, chlorophyll a＋b content and dissection of leaf during the growth and development of scarlet sage. The result showed that semi-lethal pouring dose （LD50） of electron beam radiation on scarlet sage is 55Gy, lethal pouring dose of electron beam radiation on scarlet sage is 85Gy. Combined treatments of electron beam radiation and GA reduced proper concentration of GA after scarlet sage seed the damage of scarlet sage plant, 25 mg/L is the irradiated with electron beam.

关 键 词：一串红 复合处理 电子束 赤霉素 

分 类 号：S681.4[农业科学—观赏园艺]