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作 者:国秀花[1] 宋克兴[1] 郜建新[1] 刘瑞华[1]
机构地区:[1]河南科技大学材料科学与工程学院,河南洛阳471003
出 处:《兵器材料科学与工程》2007年第1期21-24,共4页Ordnance Material Science and Engineering
基 金:河南省重点科技攻关项目(0523021500);洛阳市重点科技攻关项目(020902);河南科技大学重大预研科学研究基金资助(2005ZD003);河南科技大学人才科学研究基金资助
摘 要:以Cu2O为氧源,采用包埋法在自制真空炉胆内进行了Cu-Al合金平板试样的内氧化试验,测定了内氧化层深度和试样的电导率,建立了平板试样内氧化后Cu-Al合金层和弥散强化层共存下的电导率模型,推导出Cu-Al合金平板试样的内氧化深度X和电导率!的关系:!=41.18+0.541 333 2!3X-4X2"。结果表明,内氧化后在试样横截面上有一条明显的界线,分界线的深度测定和电导率测定结果与公式计算结果吻合得较好,证明此界线即为内氧化的前沿界面,在显微镜下可测量出内氧化层的深度。The internal oxidation of Cu-Al alloy plate was conducted with Cu2O as oxidizer in the vacuum furnace. The depth of internal oxidation and the electrical conductivity were measured. The electrical conductivity model for internal oxidation of Cu-Al alloy plate was built and an equation had been derived to describe the relation between the electrical conductivity κ and internal oxidation depth X:κ=41.18+0.541 333(23X-4X^2).The results show that there is an evident boundary on the cross section of the plate after internal oxidation and the depth of internal oxidation measured in the microscopy agrees well with the depth calculated by the equation . It is proved that the boundary is internal oxidation interface and the depth of internal oxidation can be conveniently measured with the use of microscope.
关 键 词:CU-AL合金 内氧化深度 电导率 内氧化前沿界面
分 类 号:TB331[一般工业技术—材料科学与工程]
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