SnO_2对锂铌钛系微波介电陶瓷性能的影响  

Effect of SnO_2 on microwave dielectric properties of LiNb_(0.6)Ti_(0.5-x)Sn_xO_3 ceramics

作　　者：喻佑华[1] 丁银忠[1] 艾凡荣[1] 杨俊瑞[1] 王相惠[1] 

机构地区：[1]景德镇陶瓷学院材料科学与工程学院,江西景德镇333001

出　　处：《电子元件与材料》2007年第7期10-10,共1页Electronic Components And Materials

摘　　要：用SnO2作为掺杂剂对LiNb0.6Ti0.5–xSnxO3陶瓷进行改性,研究了SnO2添加量对LiNb0.6Ti0.5O3锂铌钛体系陶瓷的烧结性能,显微结构和微波介电性能的影响。结果表明:随着SnO2添加量的增加,陶瓷体密度和介电常数基本保持不变;而Q·f值随SnO2的加入有所提高,而后随SnO2含量继续增加而快速下降;在1100℃的烧结温度下,当x为0.01时,获得微波介电性能优良的微波陶瓷,其εr为67.8,τf为+4×10–6/℃,Q·f为6780GHz。The SnO2 was introduced into the LiNb0.6Ti0.5-xSnxO3 ceramic as dopant. The effects on sintering performance, microstructure and microwave dielectric properties with different amount of SnO2 in the LiNb0.6Ti0.5-xSnxO3 ceramic were investigated, The results indicate that the density and dielectric constant remains steadily when doping SnO2. The Q ·f value increased with the doping of SnO2 but decreased quickly with larger amount of additives, The dielectric properties εr=67.8, τf=4× 10^-6/℃, Q·f= 6 780 GHz were obtained for the ceramics when x = 0,01 and the sintering temperature is at 1 100℃.

关 键 词：无机非金属材料 微波介电陶瓷 锂铌钛体系 二氧化锡掺杂 介电性能 

分 类 号：TH145[一般工业技术—材料科学与工程]