磁控溅射再硒化法制备Cu（In，Al）Se2薄膜  

Preparation of Cu（In,Al）Se2 Thin Films by Selenizing Sputtered Metal Precursor

作　　者：张谷一[1] 孟飞[1] 朱洁[1] 

机构地区：[1]北京科技大学新金属材料国家重点实验室,北京100083

出　　处：《中国材料科技与设备》2007年第4期53-54,57,共3页Chinese Materials Science Technology & Equipment

基　　金：北京科技大学“422高层创新人才工程”项目（00007411）

摘　　要：本文采用磁控溅射的方法制备Cu-In-Al薄膜，然后固态源硒化制成Cu（In，Al）Se2薄膜。采用EDX分析薄膜的成分，SEM观察薄膜的表面形貌，XRD表征薄膜的组织结构。结果表明，由CuIn相为主相的预制膜制成的Cu（In，Al）Se2薄膜具有单一的黄铜矿结构，且随着Al含量的增加，晶面间距减小。The precursors of Cu-In-Al alloy were deposited on Mo-coated glass by three source sputtering technique. Cu （In,Al）Se2 films were then prepared by selenization. Films were characterized by EDX, XRD and SEM. The results show that the Cu-In-Al precursors are mainly composed of a CuIn phase. Based on this CuIn phase contained precursors, the Cu（In,Al） Se2 films with a single phase are obtained. The structural properties investigated using XRD measurements show a decrease in lattice spacing as the Al content increases.

关 键 词：Cu-In-Al合金膜 硒化 Cu(In A1)Se2薄膜 

分 类 号：X52[环境科学与工程—环境工程]