过氧化聚吡咯分子印迹膜修饰电极对3,4-二羟基苯甲酸的测定  

Molecular imprinted over-oxidized polypyrrole modified electrode for the detection of 3,4-dihydrobenzoic acid

作　　者：王桂林[1] 王荣[1] 吴霞琴[1] 章宗穰[1] 

机构地区：[1]上海师范大学化学系,上海200234

出　　处：《化学传感器》2007年第2期31-36,共6页Chemical Sensors

基　　金：国家自然科学基金(20503016);湖南大学生物传感与计量学国家重点实验室开放基金

摘　　要：利用分子印迹技术,以3,4-二羟基苯甲酸(3,4-DHBA)作模板分子,通过循环伏安法电聚合吡咯膜(PPy)和随后的定电位过氧化制备了3,4-DHBA-OPPy/GC分子印迹电极。该电极能有效地抑制电化学氧化过程中3,4-DHBA的聚合和同分异构体2,4-二羟基苯甲酸对其测定的干扰。实验结果表明,该修饰电极对3,4-DHBA测定的线性范围为1.0×10-5～1.6×10-3mol/L,检测限为5.0×10-6mol/L。Molecular imprinted over - oxidized polypyrrole films modified glassy carbon electrode （3, 4 - DHBA - OPPy/GC） was prepared by electrochemical polymerization of pyrrole with the cyclic voltammetry in the presence of template molecule, 3, 4 - dihydrobenzoic acid （3, 4 - DHBA）, and was followed by over - oxidized at 1.3 V in phosphate buffer solution （pH = 9.05）. The modified electrode could successfully avoid the polymerization of oxidized 3, 4 - DHBA and the interference of 2, 4 - DHBA. A linear response curve was obtained from 1.0 x 10^-5 mol/L to 1.6 x 10^-3 mol/L, with the detection limit of 5.0 x 10^-6 mol/L.

关 键 词：3  4-二羟基苯甲酸 2  4-二羟基苯甲酸 分子印迹 聚吡咯 修饰电极 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]