一种低电压高精度CMOS带隙基准设计  

Design of a High Accuracy and Low Voltage CMOS Band-gap Reference Circuit

作　　者：李攀[1] 田泽[1] 强新建[1] 王进军[1] 

机构地区：[1]西北大学信息学院,陕西西安710069

出　　处：《航空计算技术》2007年第2期53-55,59,共4页Aeronautical Computing Technique

基　　金：美国应用材料创新基金资助(ZX05097-XA-AM-200514)

摘　　要：设计了一种标准CMOS工艺下的低电压带隙基准电路,该电路使用了温度的二阶曲率补偿技术,使输出电压达到了较低的温度系数。HSPICE的仿真结果表明,该电路在-20℃~120℃的温度范围内,输出电压变化为500uV,在1.0V^1.8V的电源电压范围内,输出电压为284.6±0.3mV,电压抑制比约为60dB,最低工作电压接近于1V,在1.3V的电源电压时,总共耗为5uW,适合于低电压低功耗领域的应用。Abstract：For low voltage and high precision applications, a standard CMOS low voltage band -gap reference circult is introduced in this paper. Using second curvature compensation, this circuit makes the output voltage reach a lower temperature range. The HSPICE simulating results indicate that when the temperature range is within-20c to 120 c ,the output voltage is changed to 500uV, and when the power supply range voltage is from 1. OV to 1.8V, the output voltage of the circuit is 284.6 ± 0.3mV and the PSSR is 60dB, and it can work well when the power supply voltage closes to 1V. When power consumption is 5uW at 1.3V power supply with a standard 0.6 μm double - poly n - well CMOS technology, it is suitable for lower voltage and lower power applications.

关 键 词：CMOS 带隙基准 曲率补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]