Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition  

作　　者：熊德平 任晓敏 王琦 周静 舒伟 吕吉贺 蔡世伟 黄辉 黄永清 

机构地区：[1]Key Laboratory of Optical Communication and Lightwave Technologies Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876 [2]Institute of Continuing Education Beijing University of Posts and Telecommunications,Beijing 100876

出　　处：《Chinese Optics Letters》2007年第7期422-425,共4页中国光学快报（英文版）

基　　金：This work was supported by the National Basic Research Program of China(No.2003CB314901);the Program for New Century Excellent Talents in University(No.NCET-05-0111);the National Natural Science Foundation of China(No.60576018).

摘　　要：Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.

关 键 词：ANNEALING Epitaxial growth Full width at half maximum HETEROJUNCTIONS Metallorganic chemical vapor deposition PHOTOLUMINESCENCE Semiconducting gallium arsenide SUPERLATTICES X ray diffraction analysis 

分 类 号：TN304.05[电子电信—物理电子学]