发展容易集成加工的高功能有机薄膜晶体管  

Optimization of OTFT Structures towards Easy Integration

作　　者：朱峰[1] 闫东航[1] 

机构地区：[1]中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,长春130022

出　　处：《现代显示》2007年第8期18-22,共5页Advanced Display

摘　　要：描述了近10年来开发容易集成加工的高功能有机薄膜晶体管方面所取得的成就。针对有机薄膜晶体管存在金属、氧化物和有机物三相交汇点这个明显的结构缺陷,以克服高介电绝缘栅漏电问题为基础,综合考虑器件加工的方便性与一致性、界面态和空间电场分布等因素,设计并优化出双绝缘栅和夹心型器件结构。通过引入缓冲层有效地降低了电极与半导体之间的接触电阻,使器件的性能能够满足有源矩阵显示的需要。We review the outcome of optimization of OTFT structures for ease of integration and high performance during the past ten years obtained in our research group. We focused on our new device design to solve the week point of OTFT structure with a three-phase meeting point of metal, oxidize and organic substance. We developed new device structures with double-layer insulator and sandwich structure to overcome the main problem of large leakage current of high dielectric insulator. Ease in fabrication, uniformity in device, interface state and distribution of electric filed were considered carefully during the optimization. Buffer layer was employed to reduce contact resistance between electrode and organic semiconductors, which enable OTFT meet the requirement of active matrix display.

关 键 词：有机薄膜晶体管 漏电 接触电阻 

分 类 号：TN321.5[电子电信—物理电子学]