折射率色散效应对晶体硅太阳电池反射率的影响  

Refractive-index Dispersion Effect on Anti-reflection Coatings of Crystalline Si Solar Cells

作　　者：白一鸣[1] 陈诺夫[1] 彭长涛[1] 梁平[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《光子学报》2007年第7期1202-1206,共5页Acta Photonica Sinica

基　　金：国家自然科学基金(60176001);国家重大基础研究发展规划(2002CB311905)资助

摘　　要：为了分析色散效应对晶体硅太阳电池反射率的影响,在考虑材料折射率色散效应的情况下,运用光学干涉矩阵计算了具有SiO2单层减反射膜和MgF2/ZnS双层减反射膜晶体硅太阳电池的反射率与波长的函数关系,并与实验结果和未考虑色散效应的计算结果进行了对比分析.结果表明:考虑折射率色散效应的计算结果与实验测量数据完全相符,而未考虑折射率色散效应的计算结果与实验测量数据相差较大,最大差值分别为21.5%和16.9%.In order to investigate influences of refractive-index dispersion on the reflectance of crystalline silicon solar cells, considering refractive-index dispersion effect of each layer, reflectance of single layer （SL） SiO2 and double layer （DL） MgF2/ZnS anti-reflection coatings （ARCs） as a ruction of wavelength was calculated according to optical interference matrix, and was compared with that of no dispersion effect and experiment results. The results show that theoretical results with considering refractive index dispersion are consistent with the reported experimental data. However, there are obvious differences between theoretical calculation without considering refractive-index dispersion and the reported experimental data, and the maximum reflectance difference are 21.5% and 16.9%.

关 键 词：薄膜光学 减反射膜 晶体硅太阳电池 色散效应 

分 类 号：TN304[电子电信—物理电子学]