Current Progress of Hf(Zr)-Based High-k Gate Dielectric Thin Films  

作　　者：Gang HE Lide ZHANG 

机构地区：[1]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China　

出　　处：《Journal of Materials Science & Technology》2007年第4期433-448,共16页材料科学技术（英文版）

基　　金：the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603);the National Natural Science Foundation of China(Grant No.10674138);the Special Fund for President Scholarship,Chinese Academy of Sciences.

摘　　要：With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.

关 键 词：Hf （Zr）-based high-k gate dielectric PVD Optical properties  metal-oxide-semiconductor 

分 类 号：TG14[一般工业技术—材料科学与工程]