Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering  

作　　者：Xianwu XIU Zhiyong PANG Maoshui LV Ying DAI Li＇na YE Shenghao HAN 

机构地区：[1]School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [2]Department of Space Science and Applied Physics, Shandong University at Weihai, Weihai 264209, China

出　　处：《Journal of Materials Science & Technology》2007年第4期509-512,共4页材料科学技术（英文版）

基　　金：supported by the National Key Basic Research and Development Programme of China(No.2001CB610504);the National Natural Science Foundation of China(Grant No.60576039,10374060).

摘　　要：Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.

关 键 词：Zinc oxide Magnetron sputtering Ar pressure  Molybdenum-doped ZnO Films 

分 类 号：TB43[一般工业技术]