1.8GHz CMOS高效率E类功率放大器  

A 1.8 GHz CMOS Class-E Power Amplifier with High Efficiency

作　　者：杜春山[1] 陈常勇[1] 刘章发[1] 

机构地区：[1]北京交通大学电子工程系,北京100044

出　　处：《半导体技术》2007年第8期703-706,共4页Semiconductor Technology

摘　　要：电子产品的低功耗设计已成为研究的热点,低功耗、高效率功率放大器已成为降低系统功耗的关键所在。E类功率放大器是一种开关模式的功率放大器,理论上可以达到100%的漏极效率,具有广泛的应用前景。论述了用标准CMOS工艺实现高效率E类功率放大器所面临的诸多挑战以及一些相应的解决措施,并以0.18μm CMOS工艺设计了包含驱动级的两级结构的E类功率放大器。Spectre仿真结果表明,所设计的功率放大器在+25.5 dBm的输出功率时,具有52.8%的功率附加效率。The low power consumption design in electronic products becomes a research hotspot. A power amplifier with low power consumption and high efficiency contributes mostly to reduce the whole system power consumption. Theoretically, Class-E power amplifier with 100% drain efficiency operates in a switched mode and has wide application potentials. The challenges and solutions in implementing high efficient CMOS Class-E power amplifiers were illustrated. A two-stage Class-E power amplifier including the driving stage was designed using 0.18 μm CMOS process. The simulation results show that it can deliver ＋ 25.5 dBm power with 52.8 % PAE.

关 键 词：E类功率放大器 高效率 开关功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]