Pr掺杂对Ce_(5.2)Sm_(0.8)MoO_(15-δ)晶界及电性能的影响  

Effects of Pr Dopant on Grain Boundary and Electrical Properties of Ce_(5.2)Sm_(0.8)MoO_(15-δ)

作　　者：周德凤[1] 郭微[1] 朱建新[1] 郝险峰[2] 葛志敏[1] 叶俊峰[1] 孟健[2] 

机构地区：[1]长春工业大学生物工程学院,长春130012 [2]中国科学院长春应用化学研究所稀土化学与物理重点实验室,长春130022

出　　处：《化学学报》2007年第14期1313-1317,共5页Acta Chimica Sinica

基　　金：国家自然科学基金(Nos.20331030;20671088)资助项目

摘　　要：在Ce5.2Sm0.8-xPrxMoO15-δ体系中引入少量Pr得新氧化物Ce5.2Sm0.72Pr0.08MoO15-δ,通过X射线衍射(XRD),拉曼光谱(Raman),X射线光电子能谱(XPS),场发射扫描电镜(FE-SEM)等手段对氧化物结构进行分析,交流阻抗谱测试电性能;讨论掺杂少量Pr对Ce5.2Sm0.8MoO15-δ微观结构和电性能的影响.结果表明,少量Pr3+的掺杂可降低晶界电阻,增加离子扩散通道,降低体系的总电导激活能和晶界电导激活能,提高氧化物的总电导率和晶界电导率;500℃时掺Pr材料的晶界电导率为6.79×10-3S·cm-1,比未掺Pr材料的晶界电导率(5.61×10-5S·cm-1)提高约2个数量级.Material formulated as Ce5.2Sm0.8-xMoO15-δ （x = 0.08） was prepared by adding small amounts of Pr dopant in oxide Ce5.2Sm0.8-xMoO15-δ. Structural and electrical properties were investigated by means of X-ray diffraction （XRD）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS）, field emission scanning electron microscopy （FE-SEM） and AC impedance spectroscopy. The effect of small amounts of Pr on microstructure and electrical conductivity was discussed. It was showed that the material doped with Pr has a lot of dents and small openings, which provide channels for oxygen ions, resulting in lower grain boundary and total conductivity activation energy. Thus the corresponding grain boundary conductivity and total conductivity of the material were improved notably. The grain boundary conductivity of the material doped with Pr is 6.79×10^-3S·cm^-1 at 500 ℃, which is twice as large as that without Pr （5.61×10^-5S·cm^-1）.

关 键 词：固体电解质 电导率 晶界 固体氧化物燃料电池 

分 类 号：O614.33[理学—无机化学]