SiO_x薄膜的制备及发光特性研究  

Study on preparation of SiO_x thin films and their luminescence characteristics

作　　者：游泳[1] 何娟美[1] 徐小华[1] 饶瑞昌[1] 符五久[1] 李群[1] 吴雪梅[2] 

机构地区：[1]东华理工学院物理系,江西抚州344000 [2]苏州大学物理科学与技术学院,江苏苏州215006

出　　处：《真空》2007年第4期47-49,共3页Vacuum

基　　金：苏州大学薄膜材料重点实验室资助课题;东华理工学院硕博基金(DHS0511)课题

摘　　要：本论文采用双离子束溅射沉积技术制备了非晶的SiOx薄膜,XPS的测试表明Si是以单原子或低价氧化物的形态存在于薄膜内;在波长为240nm紫外光的激发下,室温及1000℃退火后SiOx薄膜的PL谱图显示样品中存在峰位分别处于320nm,410nm,560nm,630nm四个相互分离的峰,其发光机制分别为来自中性氧空位缺陷(≡Si-O-O-Si≡)、双配位硅悬挂键(O-Si-O)、非桥氧空位中心以及其他缺陷所形成的发光中心。The SiOx films were prepared by dual-ion-beam co-sputtering process from a composite target. Testing results by XRD and TEM indicated that the film is amorphous and Si can only exists in form of monoatomic Si or SiOx（x〈2） in the film. Under 240nm ultraviolet excitation, all the samples emit the comparable bands from the peaks at 370nm, 410nm, 470nm and 510nm at room temperature or after annealing at 1000℃. Their possible luminescent mechanisms were discussed, and it was found that they all come from the luminescence centers（LCs） in the matrix of SiOx.

关 键 词：SIOX 薄膜 双离子束 溅射 光致发光 

分 类 号：TN304.055[电子电信—物理电子学]