采用二次曲线校正的CMOS带隙基准  

A CMOS Bandgap Reference Corrected by Second Degree Curve

作　　者：王红义[1] 来新泉[1] 李玉山[1] 陈富吉[1] 

机构地区：[1]西安电子科技大学电路CAD研究所,西安710071

出　　处：《电子器件》2007年第4期1155-1158,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60172004);国家教育部博士点基金资助项目(20010701003)

摘　　要：利用MOS管饱和电流对于“过驱动电压”的平方关系,提出一种新颖的电压差平方电路,产生相对于温度差的二次项补偿量,对典型的CMOS带隙基准进行曲率校正,获得更小的温度系数.基于某标准0.5μm CMOS工艺,在-40-120℃范围内,该方法将传统带隙基准的温度系数从21.4×10^-6/℃减小到4.5×10^-6/℃,电路的输入电压可以低至1.8 V,工作电流12μA,输出基准电压可在0-1.2 V之间任意设置.该方法可在任何CMOS工艺或BiCMOS工艺中实现,具有很强的通用性.By using the square relation of the MOSFET saturated current to the overdrive voltage, a novel voltage difference square circuit is presented. Then, a second degree compensation term is produced to corrected the curve of the conventional CMOS bandgap reference, so that a small temperature coefficient （[TC]） is achieved. Based on a standard 0. 5 μm CMOS process, over the -40℃ to 120℃ temperature range, the method reduces the [TC] of a conventional reference from 21.4 × 10^-6/℃ to 4. 5 × 10^-6/℃. The power supply can be as low as 1.8 V and the total consumed current is 12 μA. The reference can be easily set from 0 V to 1.2 V. This method can be widely used in any CMOS process and BiCMOS process.

关 键 词：带隙基准 温度系数 曲率校正 二次曲线 

分 类 号：TN432[电子电信—微电子学与固体电子学]