嵌入式低压降线性稳压器设计与分析  

Design and Analysis of Integrated Low Dropout Linear Regulator

作　　者：来新泉[1] 谢飞[1] 郑重[1] 

机构地区：[1]西安电子科技大学CAD所,西安710071

出　　处：《电子器件》2007年第4期1230-1233,共4页Chinese Journal of Electron Devices

基　　金：西安应用材料创新基金资助(XA-AM-200504)

摘　　要：以LDO内置在音频功率放大器等系统级芯片(SOC)中实现内部供电电源为目的,给出了一种简单的高精度、宽输入电压范围LDO线性稳压器,采用TSMC 0.6μm BCD高压工艺实现.与传统方法相比,该电路在温度系数、频率补偿、输出瞬态响应等关键参数指标上有所改进,输出电压作为内部供电电源所需具备的稳定性精度为±1.2%,最大输出负载电流为30 mA.Low dropout（LDO） linear regulator can be installed in a system on chip（SOC） as internal voltage supply. Based on TSMC 0. 6 μm BCD high voltage technology, a high precision LDO featured with wide input voltage range is presented. Compared with conventional methods, with the improvement in temperature parameter, frequency compensation and transient output response as well, the output stability precision is ±1.2%, which can satisfy sufficiently what is needed as internal voltage supply, and the maximal output load current is 30 mA.

关 键 词：SOC 稳定性 LDO 密勒补偿 等效串联电阻(ESR) BCD高压工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]