衬底对Cu(In,Ga)Se_2薄膜织构的影响  

The influence of substrate on texture of Cu(In,Ga)Se_2 film

作　　者：李微[1] 敖建平[1] 何青[1] 刘芳芳[1] 李凤岩[1] 李长健[1] 孙云[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室,天津300071

出　　处：《物理学报》2007年第8期5009-5012,共4页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2004AA513020)资助的课题.~~

摘　　要：分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2薄膜具有明显的(112)择优生长,而在(110)取向的Mo薄膜衬底上,Cu(In,Ga)Se2薄膜的织构为(220/204)取向.研究结果表明,只有(110)择优取向的Mo薄膜衬底对Cu(In,Ga)Se2薄膜(220/204)织构的形成有重要影响.Cu（In, Ga）Sez layers with thickness of 2 μm were prepared by co-evaporation on different substrates of soda-lime glass, Mo foil, Mo film without preferred orientation and （100）-oriented Mo film. X-ray diffraction measurements were carried out to study the influence of substrates on the preferential growth of the films. The （112） texture of Cu（In, Ga）Se2 films deposited on the four substrates mentioned above decreases the given order, while the （220/204） texture begins to appear at first and its intensity increases gradually. On the soda-lime glass and Mo foil surfaces, the Cu（In,Ga）Se2 film shows almost a pure （112） texture. On the contrary, the （220/204） Cu（In, Ga）Se2 surface orientation dominates on the substrate of （ll0）-oriented Mo film. On Mo film without preferred orientation, no evidence of significant texture exists in Cu（In, Ga）Se2 layers. These results indicate that, of the substrates investigated, only the （110）-oriented Mo film has significant influence on the formation of （220） texture in Cu（In, Ga） Se2 film.

关 键 词：择优取向 cu(In Ga)Se2薄膜 太阳电池 

分 类 号：O484.1[理学—固体物理]