Pb(Zr,Ti)O_3薄膜微区残余应力的X射线面探扫描分析  

Micro area residual stress analysis of ferroelectric films by means of XRD2 technique

作　　者：杨帆[1] 费维栋[2] 高忠民[3] 蒋建清[1] 

机构地区：[1]东南大学材料科学与工程学院,江苏南京211189 [2]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001 [3]吉林大学化学学院,吉林长春130012

出　　处：《功能材料》2007年第7期1097-1101,共5页Journal of Functional Materials

基　　金：江苏省博士后科研资助项目(0602001A)

摘　　要：根据在X射线二维衍射几何关系下建立的应力应变方程,提出了一种基于X射线多晶面探衍射仪系统分析射频磁控溅射制备的Pb(Zr,Ti)O3薄膜微区残余应力的测量方法,即通过基于X射线衍射圆锥形变的分析来表征薄膜的残余应力,试验结果表明薄膜所受为残余拉应力,同时利用X射线面探扫描方法评价了薄膜的残余应力分布。Based on the X-ray diffractometer attached with a rectangular planar detector and long pinhole collimator,a method of residual stress measurement in micro area of radio-frequency magnetron sputtering Pb（Zr,Ti）O3 film deposited on Pt/Ti/SiO2/Si substrate was proposed,that is,the characterization of residual stress in film was investigated according to analysis on the deformation of diffraction core.The stress measurement results showed that PZT film deposited on Pt/Si substrate is in tension,and a residual stress distribution with fluctuation was found in the film.

关 键 词：Pb(Zr Ti)O3薄膜 X射线二维衍射 多晶面探衍射仪 残余应力 

分 类 号：TM22[一般工业技术—材料科学与工程] TN305[电气工程—电工理论与新技术]