Sc_2O_3掺杂及其工艺参数对MgO介质保护膜性能的影响  

Influence of Sc_2O_3 Doping and Film Growth Conditions on MgO Protective Layers

作　　者：范玉锋[1] 夏星[1] 刘纯亮[1] 张劲涛[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,西安710049

出　　处：《真空科学与技术学报》2007年第4期336-340,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：MgO介质保护膜掺杂可以改变其性能,基于这一现象,本文利用电子束加热蒸镀法,在多种掺杂比和多种工艺条件下制备了MgO介质保护膜和宏单元气体放电屏。利用扫描电子显微镜(SEM)对制备的复合介质保护膜样品的进行了微观表征,并且,利用宏单元气体放电实验屏研究了介质保护膜的气体放电特性。结果表明:与纯MgO介质保护膜相比,掺杂Sc2O3的介质保护膜具有较好的性能。The influence of Sc2O3 doping and film growth conditions on MgO protective layers in AC plasma display panel（AC-PDP） was studied. Sc2O3-doped MgO fdms, grown by electron-beam evaporation under different growth conditions including variations in dopant concentrations, η,in substrate temperatures, T, and in evaporation rates, V, were characterized with scanning electron microscopy（ SEM）;and the discharge characteristics were studied with macro-cell scrcens. The results show that Sc2O3-doped MgO protective layers outperform pure MgO protective layers.

关 键 词：等离子体显示器 保护膜 Sc2O3掺杂 着火电压 

分 类 号：O484[理学—固体物理]