IGCT门极驱动特性研究  

Investigation on IGCT Gate Drive Circuit

作　　者：张婵[1] 童亦斌[1] 金新民[1] 

机构地区：[1]北京交通大学新能源研究所

出　　处：《电力电子》2007年第3期41-44,共4页Power Electronics

摘　　要：IGCT(集成门极换流晶闸管)是一种同时结合GTO和IGBT优点的新型大功率半导体开关器件。本文首先结合4500V/4000A IGBT驱动电路设计,分析IGCT基本工作原理和驱动电路工作原理。最后通过低压大电流实验,验证了IGCT开通、关断原理。证明了IGCT在相同环境温度的导通状态下,门极驱动电流对导通压降没有影响。IGCT is a new kind of high power semiconductor, which combines the advantage of [GBT and GTO. A 4500V/4000A integrated gate commutated thyristor gate drive circuit has been designed. The paper explains the principle of IGCT and drive circuit in detail. In the end, the paper introduces the low voltage and high current test bench which verifies IGCT turn on and turn off procedure. During the on-state, the gate current doesn＇ t influence IGCT＇ s on-state voltage at the same temperature.

关 键 词：IGCT 集成门极驱动电路 硬开通 硬关断 

分 类 号：TN34[电子电信—物理电子学]