Co/Cu多层纳米线阵列的制备与磁性能  

Fabrication and Magnetic Properties of Co/Cu Multilayer Nanowire Arrays

作　　者：姚素薇[1] 宋振兴[1] 王宏智[1] 

机构地区：[1]天津大学化工学院应用化学系杉山表面技术研究室,天津300072

出　　处：《物理化学学报》2007年第8期1306-1310,共5页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(50271046);教育部博士点基金(20030056034)资助项目

摘　　要：利用双槽直流电沉积技术在阳极氧化铝(AAO)模板的纳米孔中获得调制波长为50和200nm的Co/C多层纳米线,多层纳米线的调制波长由电沉积时间控制.运用扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征纳米线的形貌,Co/Cu多层纳米线的长度约20"m,直径约80nm;用X射线衍射(XRD)研究多层线的结构;用振动样品磁强计(VSM)测试纳米线阵列的磁性能;利用可变磁场结合高灵敏度恒流装置研究巨磁电阻(GMR)特性结果表明,Co/Cu多层纳米线具有磁各向异性.当磁场与纳米线平行和垂直时,调制波长为50nm的多层线的矫顽力分别为87500和34200A·m-1,而调制波长为200nm的多层线阵列的矫顽力分别为28600和8000A·m调制波长为50nm的多层纳米线的磁电阻变化率高达-75%,而调制波长为200nm的多层线未产生明显的GMR效应.Co/Cu multilayer nanowire arrays embedded in anodic alumina （AAO） template were successfully prepared by dual-bath electrodeposition technique. SEM and TEM indicated that the Co/Cu nanowires were regularly spaced and uniform in shape with lengths of about 20 μm and diameters of 80 nm. The bilayer thicknesses of the two samples were 50 nm and 200 nm respectively. XRD test indicated that the Co and Cu grew in their （hcp） and （fcc） polycrystal structures, respectively. VSM test indicated that nanowire arrays had apparent magnetic anisotropy. The giant magnetoresistance （GMR） ratio of the nanowire arrays with the bilayer thickness of 50 nm was about -75%, whereas the bilayer thickness increased to 200 nm, the nanowire arrays had not GMR effect.

关 键 词：CO/CU 多层纳米线 GMR 自旋扩散长度 XRD 

分 类 号：TB383.1[一般工业技术—材料科学与工程]