高温氧化薄膜中残余应力分析和试验方法  

ANALYSIS AND MEASUREMENT OF THE RESIDUAL STRESS IN THE HIGH TEMPERATURE OXIDE THIN FILM

作　　者：杨于兴[1] 

机构地区：[1]上海交通大学,200030

出　　处：《上海金属》1997年第2期58-61,共4页Shanghai Metals

基　　金：国家自然科学基金

摘　　要：介绍一种高温氧化薄膜应力的测定技术，在一定高温氧化条件下能测定氧化膜中的生长应力，在某一温度变化范围内能测定氧化膜中的热应力，这种技术可在普通衍射仪上进行。The measurcments for the stress in the high temperaturc oxide thin film were introduced, including the growth stress determining at the certain high temperature and the thermal stress in the high temperature oxide thin film measuring during a range of temperature. The technique could be carried out with ordinary diffractometer.

关 键 词：氧化薄膜 测定 生长应力 热应力 残余应力 

分 类 号：O484.5[理学—固体物理]