以ZnO为空穴缓冲层的高效率有机电致发光器件  

High Efficiency OLEDs with ZnO As a Hole-injecting Buffer Layer

作　　者：姚辉[1] 张希清[1] 蓝镇立[1] 宋宇晨[2] 王永生[1] 

机构地区：[1]北京交通大学光电技术研究所发光与光信息技术教育部重实验室,北京100044 [2]丽水学院数理学院物理系,浙江丽水市323000

出　　处：《光电子．激光》2007年第7期785-787,共3页Journal of Optoelectronics·Laser

基　　金：国家"973"计划资助项目(2003CB314707);国家自然科学基金资助项目(60476005;50532090)

摘　　要：研制了在传统双层有机电致发光器件(OLED)ITO/NPB/AlQ/Al的阳极与空穴传输层间加入ZnO缓冲层的新型器件。研究了加入缓冲层后对OLED性能的影响,并比较了新型与传统OLED的性能,结果表明,新型器件比传统器件的耐压能力有了显著提高;当电压达到7V时,发光效率提高了35%。分析认为,ZnO缓冲层的加入,改善了界面,减少了漏电流,并且阻碍了空穴的注入,有利于改善空穴和电子的注入平衡,提高复合效率。Organic EL devices using ZnO as a hole-injecting buffer layer have been prepared. The structure of the device is ITO/ZnO/NPB/AlQ/Al. The insertion of this thin film with higher work function can improve the ITO surface and reduce drain current, which makes the device much steady and have a higher break-down voltage. ZnO buffer layer can also block the hole injection at the interface of anode and hole transporting layer,which can be attributed to the more balanced carriers concentration in emissive layer and raise the EL efficiency. The EL efficiecy of device with ZnO buffer is about 35% at 7 V which is higher than that of the device without it.

关 键 词：有机电致发光器件(OLED) ZnO缓冲层 发光效率 界面 

分 类 号：TN383.1[电子电信—物理电子学]