掺铋电解二氧化锰可充性研究  

Research on the Rechargeability of Bismuth(Ⅲ) Doped Electrolytic Manganese Dioxide

作　　者：童庆松[1] 甘晖[1] 连锦明[1] 张其昕[1] 

机构地区：[1]福建师范大学化学系,福建350007

出　　处：《电池》1997年第1期14-17,共4页Battery Bimonthly

摘　　要：利用日本TOYO SODA有限公司的粉状电解二氧化锰与含铋离子的溶液混合的物理方法制备掺铋的电解二氧化锰。掺铋样品的化学分析、循环伏安扫描及模拟电池的充放电实验表明:在浅度和深度放电时,掺杂样的充放电性能均有一定的改善,掺入的铋对放电在—0.33V至—0.62V(vs.Hg/HgO)范围的二氧化锰可充性改善更加明显,充放电反应机理也有一定的改变。The physically bi-doped electrolytic manganese dioxide (EMD) was prepared by mixing EMD powder (made in Japan) with Bi (Ⅱ)ion solution. This sample was studied by chemical analysis cyclic voltammetry and recharging/discharging experiment. These experimental results indicated that the doped EMD showed very good rechargeability in deep and shallow discharging region especially the doped bismuth (Ⅲ)caused important effect when the doped EMD discharged between -0.33V to -0. 62V(vs. Hg/HgO)and recharging/discharging mechanism has been changed.

关 键 词：二氧化锰 电解二氧化锰 金属导电材料 

分 类 号：TM241[一般工业技术—材料科学与工程]