地高辛的半微分阴极吸附伏安法研究  

DETERMINATION OF TRACE DIGOXIN BY SEMI-DIFFERENTIAL ABSORPTION CATHODIC VOLTAMMETRY

作　　者：张培敏[1] 施清照[2] 吕荣山[2] 

机构地区：[1]浙江医科大学基础医学院医用化学教研室 [2]杭州大学化学系

出　　处：《浙江医科大学学报》1997年第2期60-62,66,共4页

摘　　要：作者用半微分阴极吸附伏安法测定地高辛的方法，在1．0×10－3mol／LNaOH底液中，于—1．0V富集2min，以100mV／s向阴极扫描，有一稳定的还原峰。在地高辛浓度为4．0×10－7mol／L～10．0×10－7mol／L范围内，该还原峰峰高与地高辛浓度成线性，检出下限为1．0×10－8mol／L。本文用不同的电化学方法证明，地高辛在悬汞电极上的电极过程为吸附准可逆过程，其饱和吸附量为6．51×10－10mol／cm2，转移系数为0．78。In 1. 0×10-3mol/L NaOH medium,Digoxin produced a sensitive absorptive reduction peak at-1. 265 V (vs: SCE),detected with semi-differential absorption cathodic voltammetry. The initial of potential was at-1. 0 V for 2 min and the potential was scanned in a cathodic direction at a sweep rate of 100 mV/s. The peak height had a linear relationship with concentration of digoxin over the range of 4. 0 ×10-7mol/L~ 10 ×10-7mol/L. It's detection limit was 1. 0 ×10-8mol/L. The method has been applied to detect digoxin in tablet and the result was satisfactory. The absorbent character and the reduction process of digoxin were studied by many electrochemical methods. We found the electrode process was absorption semireversal process. The superficial saturated concentration of digoxin on HIDE was 6. 51 ×10-10 mol/cm2 and the coefficient of transfer was 0. 78.

关 键 词：地高辛 半微分 阴极吸附伏安法 测定 强心药 

分 类 号：R972.1[医药卫生—药品]