非晶态As_2S_8半导体薄膜波导的热处理效应  

Effect of Annealing Temperature on Amorphous Semiconductor As_2S_8 Film Waveguide

作　　者：邹林儿[1] 陈抱雪[2] 杜丽萍[2] 刘小青[1] 浜中广见[3] 矶守[4] 

机构地区：[1]南昌大学物理系,南昌330031 [2]上海理工大学光学与电子信息工程学院,上海200093 [3]日本法政大学材料化学系 [4]日本东京农工大学化工系

出　　处：《Journal of Semiconductors》2007年第8期1307-1311,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60677032);上海市重点学科建设基金(批准号:T0501)资助项目~~

摘　　要：研究了非晶态As2S8半导体薄膜在热作用下的结构变化效应.采用棱镜耦合技术、喇曼光谱测试技术,确认了As2S8薄膜经热处理后,薄膜密度增高和折射率增大的现象.实验表明,淀积态非晶As2S8半导体薄膜经紫外光饱和照射后,再经退火处理,当光折变在退火温度不低于160℃时,出现不完全可逆现象,可逆程度跟退火温度有关.实验显示,退火态非晶As2S8半导体薄膜在玻璃转化温度130℃时退火处理,光折变存在完全可逆现象.光传输实验显示,热处理后的非晶态As2S8半导体薄膜波导,其传输损耗减小了约4dB/cm.Amorphous semiconductor As2 S8 film is shown to undergo structural transformations under thermal machining. Increases in the refractive index and density are found through the application of a prism coupler and Raman spectra. The experimental results demonstrate that the no-full reversible photorefractive phenomenon in the as-deposited and well-illuminated As2 S8 film until the annealing temperature reaches 160℃ is found,and depends on the annealing temperature. The full reversible photorefractive phenomenon is observed in annealed As2 S8 film after annealing under the glass transition temperature of 130℃. An optical transmission experiment shows that the transmission loss of an amorphous semiconductor As2 S8 film after annealing decreases by about 4dB/cm.

关 键 词：硫系非晶态半导体 As2S8薄膜波导 热处理效应 光传输 

分 类 号：TN252[电子电信—物理电子学]