真空微电子三极管直流特性及栅阴极电容的计算机模拟  

Simulation of Direct Current Characteristics and Grid-to-Cathode Capacitance of Vacuum Microelectronic Triode

作　　者：秦明[1] 黄庆安[1] 魏同立 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《Journal of Semiconductors》1997年第8期616-620,共5页半导体学报（英文版）

基　　金：国家自然科学基金;国防科技预研基金

摘　　要：本文利用有限差分方法计算了真空微电子三极管中的电势与电场分布，研究了尖端顶部的电场受尖端曲率半径及栅圆环直径的影响情况，并模拟计算了该管的静态输出特性．另外通过改变尖锥及栅圆环的参数，详细研究了栅阴电容的变化情况，该模拟结果与已报道的实验结果符合较好．The electrical potential and field distribution in vacuum microelectronic triodeare simulated by using finite difference method. The effect of the tip radius and the diameter of the grid ring on the tip field is also studied and the direct output characterlstics ofthis triode is calculated. By changing the parameters of the tip and grid, the grid-to-cath-ode capacitance is studied in detail. The simulated results are in agreement with the experiment results reported.

关 键 词：真空 微电子三极管 栅阴极电容 模型 

分 类 号：TN112.02[电子电信—物理电子学]