辉光放电质谱仪直接测定超高纯镉中的痕量杂质元素  

DETERMINATION OF TRACE ELEMENT IN ULTRA-HIGH PURITY CADMIUM BY GDMS

作　　者：普朝光[1] 张震 肖绍泽[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外与激光工程》1997年第3期40-43,共4页Infrared and Laser Engineering

摘　　要：首次在国内报道了一种在无标准样品存在时，用辉光放电质谱仪VG9000（英国VG公司）直接且快捷地定量测定超高纯金属镉中痕量杂质元素的方法。该方法可获得用其它仪器分析无法达到的技术参数，也可应用于冶金或半导体工业中超高纯金属和半导体材料中痕量杂质元素的定量分析。In this paper a direct method for determinating more than sixty trace elements in ultra-high purity cadmium by glow discharge mass spectrometer (GDMS) is first reported in China. Experiments show that this method has many unique advantages and can be used as a powerful trace elemental quantitative analysis of ultra-high purity metal and semiconductor where there is a lack of well-characterized, multi-element standards available to the analyst.

关 键 词：辉光放电 质谱仪 镉 痕量元素 测定 

分 类 号：O614.242[理学—无机化学] O657.6[理学—化学]