稳恒强磁场对Al-Cu扩散偶界面中间相形成和生长的影响  

Effect of High Magnetic Field on Intermetallic Compound Layers of Al-Cu Diffusion Couple

作　　者：任晓[1] 周文龙[1] 陈国清[2] 黄朝晖[3] 张俊善[2] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116085 [2]大连理工大学材料科学与工程学院,辽宁大连116085 [3]北京航空材料研究院,北京100095

出　　处：《材料工程》2007年第8期41-44,78,共5页Journal of Materials Engineering

基　　金：国家自然科学基金项目(10477006);教育部科学技术研究重点项目(106055)

摘　　要：研究了稳恒强磁场作用下Al-Cu扩散偶界面中间相组成和扩散行为。结果表明:强磁场作用下扩散偶中间相厚度显著增加,并且随磁场强度增大,界面中间相组成发生变化。按照抛物线规律计算了强磁场作用下扩散偶中间相的扩散系数,发现在平行和垂直于磁场的两个方向上扩散系数有显著差异,垂直于磁场方向的扩散系数比平行于磁场方向更大。强磁场促进了Al-Cu扩散偶中Al和Cu原子的扩散,加速了界面中间相的形成和生长过程。磁场作用差异导致了扩散的各向异性。利用原子扩散理论初步分析了产生上述现象的原因。Interfacial intermetallic compound （IMC） layers of Al-Cu diffusion couple under high magnetic field were investigated. The results show that high magnetic field increases the thickness of the IMC layers and the species of the IMC layers changes with the intensity of high magnetic field. According to the parabolic law, the diffusion coefficients of the IMC layers were calculated. It can be concluded that the high magnetic field increases the diffusion coefficient, and the diffusion coefficient in the vertical directions are greater than those in the parallel ones. These results demonstrate that high magnetic field promotes the diffusion, thus enhances the formation and growth of the interfacial IMC layers. High magnetic field leads to the anisotropic diffusion in orthogonal directions. The above phenomena were preliminarily interpreted using the atom diffusion theory.

关 键 词：稳恒强磁场 Al-Cu扩散偶 中间相 扩散 

分 类 号：TG111.6[金属学及工艺—物理冶金]