Pressure-Induced Shift of R-Line of MgO：Cr^3＋ with Electron-Phonon Interaction Effect  

作　　者：ZHANG Zheng-Jie MA Dong-Ping 

机构地区：[1]College of Information Engineering, Chengdu University of Technology, Chengdu 610059, China [2]Department of Applied Physics, Sichuan University, Chengdu 610065, China

出　　处：《Communications in Theoretical Physics》2007年第2X期357-362,共6页理论物理通讯（英文版）

摘　　要：By means of improved ligand-field theory, the ＂pure electronic＂ pressure-induced shift （PS） and the PS due to electron-phonon interaction （EPI） of R-line of MgO：Cr^3＋ have been calculated, respectively. The calculated results are in very good agreement with the experimental data. The behaviors of the pure electronic PS of R-line of MgO：Cr^3＋ and the PS of its R-line due to EPI are different. It is the combined effect of them that gives rise to the total PS of R-line, which has satisfactorily explained the experimental results. The comparison between the feature of R-line PS of MgO：Cr^3＋ and that of R1-line PS of ruby has been made.

关 键 词：high-pressure effect electron-phonon interaction R-line improved ligand-field theory admixture of ｜t2^2（3T1）e^4T2） and ｜t2^32E） 

分 类 号：O45[理学—无线电物理]