化学溶液分解法制备(Bi_(0.9)Nd_(0.1))_2Ti_2O_7薄膜  

Preparation of(Bi_(0.9)Nd_(0.1))_2Ti_2O_7 Thin Films on p-Si Substrates by Chemical Solution Deposition

作　　者：杨冬梅[1] 韩建儒[1] 袁春雪[1] 姜付义[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《中国稀土学报》2007年第4期505-508,共4页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金(60278036;50172031)资助项目

摘　　要：采用化学溶液分解法(CSD)在p-Si(111)衬底上制备了(Bi0.9Nd0.1)2Ti2O7薄膜。用X射线衍射技术分析了薄膜的结构和结晶性,结果显示,在600℃退火10min得到了结晶性较好、表面致密的多晶薄膜;用原子力显微镜描述了薄膜的表面形貌,与在XRD中观察到的择优取向是一致的;同时还研究了薄膜的电学性能。结果表明,在0～6V范围内,薄膜的漏电流小于1.53×10-10A;在室温100kHz下,其介电常数为166,介电损耗因子为0.227,显示出薄膜具有较好的绝缘性和介电性能。（Bi0.9Nd0.1）2Ti2O7 thin films were prepared on p-Si （111 ） substrates by a chemical solution deposition method. The structural characteristics and crystallinity of the films were studied by X-ray diffraction （XRD）. It was found that oriented films with good crystallinity were obtained by annealing at about 600 ℃ for 10 min. The surface morphology of the films was analyzed by atomic force microscopy （AFM）, and the 〈 111 〉 was a preferred orientation. The electric properties of the thin films were also examined. The results showed that, the leakage current was below 1.53×10^-10 A at an applied voltage range of 0 ~ 6 V ; at room temperature, the dielectric constant and loss were 166 and 0. 227, respectively. The results showed that thin films had good insulation and dielectric properties.

关 键 词：化学溶液分解法 (Bi0.9Nd0.1):Ti2O7 薄膜 介电常数 稀土 

分 类 号：TB43[一般工业技术]