一种高精度BiCMOS带隙电压基准源的设计  

Design of a High Precision BiCOMS Bandgap Voltage Reference

作　　者：李淼[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川省610031

出　　处：《微计算机信息》2007年第04Z期294-295,227,共3页Control & Automation

基　　金：国家自然科学基金资助的项目基金号(60371017);四川省学术和技术带头人资助项目

摘　　要：在对传统典型CMOS带隙电压基准源电路分析基础上提出了一种高精度,高电源抑制带隙电压基准源。电路运用带隙温度补偿技术,采用共源共栅电流镜,两级运放输出用于自身偏置电路。整个电路采用了UMC 0.6um BiCMOS工艺实现,采用HSPICE进行进行仿真,在TT模型下,仿真结果显示当温度为-40℃～80℃,输出基准电压变化小于1.5mV,低频电源抑制比达到75dB以上。　A design of high precision and high power supply rejection ratio（PSRR） was presented.The technology of temperature compensation and cascade current mirror was used,and the output of two stage amplifier was used for the bias of itself.It was implemented in UMC0.6um BiCOMS technology,at TT model,simulation showed that the output voltage varied lower than 1.5mV with a temperature range of -40 ℃～80℃ and the lower PSRR was higher than 75dB.

关 键 词：带隙电压基准源 电源抑制比 温度补偿 共源共栅电流镜 

分 类 号：TN433[电子电信—微电子学与固体电子学]