压印光刻中紫外光诱导阻蚀胶固化控制计算  

Research on Control and Calculation of Resist Curing Inducted by UV Light in Step Imprint Lithography

作　　者：陈立峰[1] 卢秉恒[1] 

机构地区：[1]西安交通大学机械制造系统工程国家重点实验室,西安710049

出　　处：《光子学报》2007年第B06期231-234,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(50505037);国家973重点基础研究发展计划(2003CB716203);中国博士后科学基金(2005037242)资助

摘　　要：针对压印过程中两类基本的复型缺陷,从实验分析中得出其主要原因是曝光后阻蚀胶的固化程度难以控制.通过分析紫外曝光光源与阻蚀胶的光谱匹配性,得出使得阻蚀胶固化的有效波长为365 nm;对光诱导紫外曝光过程中紫外光的传播分析,建立了阻蚀胶中光强分布的数学模型;用粘度来表征阻蚀胶的固化程度,建立了阻蚀胶中的粘度分布函数.分析了阻蚀胶对365 nm紫外光的吸收率以及膜厚对阻蚀胶中光强分布均匀性的影响,得出复型后阻蚀胶凸起处的光强分布均匀性对吸收率及膜厚更为敏感的结论.It caused the two basic pattern transferring defects in nanoimprint lithography process that the resist curing degree after UV exposure was difficult to control. Through analysis of the spectrum matching performance between UV exposure lamp and the resist it was known that the effective light to the resist curing was the light whose wavelength was 365 nm. By analizing the UV light transmission during the UV exposure, a model of the UV light intensity distribution in the resist was established. In order to describe the resist curing degree after UV exposure, the model of the viscosity distribution in the resist was also established. By the analysis of the effect of the resist absorption to the light whose wavelength was 365 nm and the resist thickness to uniformity of the UV light distribution in the resist, it was concluded that the distribution of the protrusions in the resist was more sensitive to the resist absorption and resist thickness.

关 键 词：压印光刻 固化程度 粘度 

分 类 号：TM930.12[电气工程—电力电子与电力传动] O436.1[机械工程—光学工程]